Dr. Muhammad Saadat Shakoor Khan

Dr. M. S. S. KhanPostdoctoral Researcher · ISSP–CAS · Hefei

Monte Carlo transport · radiation materials

Computational models for particle transport and radiation damage

I develop Monte Carlo methods, physics libraries, and multiscale workflows for particle–solid interactions in experimentally derived 3D geometries, semiconductor metrology, ion irradiation, and radiation-tolerant materials.

C++ · Fortran · Python · MPI · IM3D · MMonCa · Gmsh

Conceptual visualization

Electron signals, primary damage, and a collision cascade

Two distinct mechanisms are shown separately: electron scattering produces measurable electron and photon signals; ion or neutron irradiation produces primary knock-on atoms, recoil cascades, vacancies, and interstitials.

Ready
  • Primary / backscattered electronThe incident electron may leave after elastic deflection
  • Elastic scatteringChanges direction with little energy loss
  • Inelastic scatteringTransfers energy through excitation or ionization
  • Emitted signalsSecondary electrons, characteristic X-rays, and material-dependent optical photons
Active mechanism
Electron–solid signals
Current stage
Primary electron enters the solidLabels and paths belong only to the active mechanism
Detected outputs
BSE · SE · X-ray · optical photonOptical emission depends on the target material
Status
Explanatory schematicNo illustrative path or count is presented as measured data
Mechanisms are separated by projectile and outcome. Electron-signal labels follow electron-transport physics; the damage mode follows binary-collision and primary-damage terminology.

Why this matters

Simulation that connects fundamental events to engineering decisions

01

Longer-lived materials

Radiation-tolerant alloys can extend component life in fusion and fission environments.

02

Geometry that matches the specimen

TEM-derived, material-aware 3D meshes let transport codes follow particles across Si, Cr, Pt, and vacuum instead of replacing real structures with simple blocks.

03

More accurate chip metrology

Electron-transport simulation supports measurement of nanoscale semiconductor features.

04

Predictions with honest confidence

Uncertainty quantification reveals when physical-model choices materially change a simulated result.

Selected publications

Peer-reviewed work

Five papers spanning electron transport, uncertainty, nanostructures, and simulation physics.

01
Journal of Applied Physics2025

Monte Carlo study of the electron emission yields of germanium

H. I. Imtiaz, Y. B. Zou, S. F. Mao, M. S. S. Khan, Z. J. Ding

02
Journal of Applied Physics2023

Uncertainty evaluation of Monte Carlo simulated line-scan profiles of a critical-dimension SEM (CD-SEM)

M. S. S. Khan, S. F. Mao, Y. B. Zou, Y. G. Li, B. Da, Z. J. Ding

03
Vacuum2023

An extensive theoretical quantification of secondary-electron emission from silicon

M. S. S. Khan, S. F. Mao, Y. B. Zou, D. B. Lu, B. Da, Y. G. Li, Z. J. Ding

04
Physical Chemistry Chemical Physics2023

A theoretical characterization method for non-spherical core–shell nanoparticles by XPS

J. M. Gong, M. S. S. Khan, B. Da, H. Yoshikawa, S. Tanuma, Z. J. Ding

05
Journal of Physics D: Applied Physics2021

CD-SEM characterization of smoothly varying wave structures with a Monte Carlo simulation

M. S. S. Khan, L. H. Yang, X. Deng, S. F. Mao, Y. B. Zou, Y. G. Li, H. M. Li, Z. J. Ding

View all 12 publications →

Credibility

A concise evidence trail

Looking for a simulation collaborator?

I am open to joint work in particle transport, radiation materials, scientific software, uncertainty quantification, and multiscale modelling.

Discuss a project →